Preparation of Si1-x-yGexCy Alloy Layers by SPER
用固相外延方法制备Si_(1-x-y)Ge_xC_y三元材料

The epitaxial growth of Si_(1-x-y)Ge_xC_y materials,which is very difficul t because of the great (difference) between the characteristics of C,Si and G e at oms,is studied.The Solid Phase (Epitaxial) Recrystallization (SPER)i s pr oved to be an effective method to make this kind of semiconductors,though the conditions during the preparation process must be optimized.Experimental result s show that the film (qualities) are greatly affected by the ion-implantation tem perature as well as the epitaxial annealing (temperature.) The ion-implantati on ex ecuted at liquid nitrogen temperature will improve the quality of the materials, while a higher ion-implantation temperature leads to an active annealing ef fect that may obviously affect the quality of the epitaxial layers.Two-step an n ealing is favorable to diminish the point defects introduced by ion-implantatio n ,and there exists the best temperature region for recrystallization during the se cond annealing step.The optimized conditions for the formation of ternary Si_(1-x-y)Ge_xC_y alloy layers by SPER is finally obtained.