%0 Journal Article
%T Preparation of Si1-x-yGexCy Alloy Layers by SPER<br>用固相外延方法制备Si_(1-x-y)Ge_xC_y三元材料
%A YU Zhuo
%A LI Dai-zong
%A CHENG Bu-wen
%A HUANG Chang-jun
%A LEI Zhen-lin
%A YU Jin-zhong
%A <br>于卓
%A 李代宗
%A 成步文
%A 黄昌俊
%A 雷震霖
%A 余金中
%A 王启明
%A 梁骏吾
%J 半导体学报
%D 2000
%I 
%X The epitaxial growth of Si_(1-x-y)Ge_xC_y materials,which is very difficul t because of the great (difference) between the characteristics of C,Si and G e at oms,is studied.The Solid Phase (Epitaxial) Recrystallization (SPER)i s pr oved to be an effective method to make this kind of semiconductors,though the conditions during the preparation process must be optimized.Experimental result s show that the film (qualities) are greatly affected by the ion-implantation tem perature as well as the epitaxial annealing (temperature.) The ion-implantati on ex ecuted at liquid nitrogen temperature will improve the quality of the materials, while a higher ion-implantation temperature leads to an active annealing ef fect that may obviously affect the quality of the epitaxial layers.Two-step an n ealing is favorable to diminish the point defects introduced by ion-implantatio n ,and there exists the best temperature region for recrystallization during the se cond annealing step.The optimized conditions for the formation of ternary Si_(1-x-y)Ge_xC_y alloy layers by SPER is finally obtained.
%K Si1-x-yGexCy alloys
%K SPER<br>Si_(1-x-y)Ge_xC_y材料
%K 固相外延
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=87AC088B277550AA&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=9CF7A0430CBB2DFD&sid=D5B44BB3CCE27369&eid=9C230FD2B3A7F308&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=19