Radiative Recombination between Isoelectronic Trap and Zn Acceptor in GaP:N, Zn
GaP:N,Zn中等电子陷阱与Zn受主之间的辐射复合

The photoluminescence of Zn~+ implanted GaP:N has been studied at different temperatu-res ranging from 17 to 100K.At low temperatures NN_2-Zn and Zn-LO emission lines wereobserved. NN_2-Zn was a doublet.Analysing the temperature dependence of NN_1-Zn emission,it showed the existence of bare electron bound state for NN_1 center.This work further con-firms the HTL model for NN_1 and NN_2 centers.