%0 Journal Article
%T Radiative Recombination between Isoelectronic Trap and Zn Acceptor in GaP:N, Zn<br>GaP:N,Zn中等电子陷阱与Zn受主之间的辐射复合
%A Yu Qi/
%A <br>余琦
%A 张勇
%A 郑健生
%A 颜炳章
%J 半导体学报
%D 1989
%I 
%X The photoluminescence of Zn~+ implanted GaP:N has been studied at different temperatu-res ranging from 17 to 100K.At low temperatures NN_2-Zn and Zn-LO emission lines wereobserved. NN_2-Zn was a doublet.Analysing the temperature dependence of NN_1-Zn emission,it showed the existence of bare electron bound state for NN_1 center.This work further con-firms the HTL model for NN_1 and NN_2 centers.
%K GaP:N
%K Zn
%K Photoluminescence
%K Bound exciton<br>GaP：N
%K Zn
%K 光致发光
%K 束缚激子
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=77974F472499B07D&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=9CF7A0430CBB2DFD&sid=E5ED9059DE792E50&eid=569BDAA4FEA0F7F9&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2