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半导体学报 2005
Enhanced Exposure Model and Its Parameter Measurements for Thick Photoresist
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Abstract:
Considered the nonlinear factors existing in the exposure process of thick photoresist,an enhanced Dill model for thick photoresist is proposed,which improves the original Dill model and modifies the definition of Dill exposure parameters.Measurement precisions of exposure parameters for thick photoresist will greatly affect the simulation results of exposure process.An experimental facility for measuring the exposure parameters is set up,and transmittance curves with various resist thickness are obtained experimentally.The rules of exposure parameters with the resist thickness,prebaking temperature and time are deduced with statistical theory.At last,the simulation analysis for exposure process of the thick photoresist and photolithography experiment examples are given.