%0 Journal Article
%T Enhanced Exposure Model and Its Parameter Measurements for Thick Photoresist<br>厚层抗蚀剂曝光模型及其参数测量
%A Liu Shijie
%A Du Jinglei
%A DUAN Xi
%A Luo Boliang
%A Tang Xionggui
%A Guo Yongkang
%A Du Chunlei
%A <br>刘世杰
%A 杜惊雷
%A 段茜
%A 罗铂靓
%A 唐雄贵
%A 郭永康
%A 杜春雷
%J 半导体学报
%D 2005
%I 
%X Considered the nonlinear factors existing in the exposure process of thick photoresist,an enhanced Dill model for thick photoresist is proposed,which improves the original Dill model and modifies the definition of Dill exposure parameters.Measurement precisions of exposure parameters for thick photoresist will greatly affect the simulation results of exposure process.An experimental facility for measuring the exposure parameters is set up,and transmittance curves with various resist thickness are obtained experimentally.The rules of exposure parameters with the resist thickness,prebaking temperature and time are deduced with statistical theory.At last,the simulation analysis for exposure process of the thick photoresist and photolithography experiment examples are given.
%K thick photoresist
%K lithography
%K exposure
%K enhanced Dill model
%K exposure parameters<br>厚层抗蚀剂
%K 光刻
%K 曝光
%K 增强Dill模型
%K 曝光参数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EFC0F7CCF6DDC729&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=94C357A881DFC066&sid=4CB3DBBCE4B39661&eid=5DD55A2029F498FE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9