Doping of Nanocrystalline Four Hexagnol Silicon Carbide Films
纳米4-H碳化硅薄膜的掺杂现象

Compared with phosphorus in SiC films,the doping efficiency of boron is much higher.Their dark conductivities obey both Meyer Neldel rule and inverse Meyer Neldel rule.The doping efficiency of nanocrystalline SiC films is higher than that of amorphous silicon carbide films.High transport efficiency is ascribed to the tunneling amouphous states and the interface transmission between amorphous network and nanocrystalline.