%0 Journal Article
%T Doping of Nanocrystalline Four Hexagnol Silicon Carbide Films<br>纳米4-H碳化硅薄膜的掺杂现象
%A Zhang Hongtao
%A Xu Zhongyang
%A Zou Xuecheng
%A Wang Chang''''an
%A Zhao Bofang
%A Zhou Xuemei
%A Zeng Xiangbing
%A <br>张洪涛
%A 徐重阳
%A 邹雪城
%A 王长安
%A 赵伯芳
%A 周雪梅
%A 曾祥兵
%J 半导体学报
%D 2002
%I 
%X Compared with phosphorus in SiC films,the doping efficiency of boron is much higher.Their dark conductivities obey both Meyer Neldel rule and inverse Meyer Neldel rule.The doping efficiency of nanocrystalline SiC films is higher than that of amorphous silicon carbide films.High transport efficiency is ascribed to the tunneling amouphous states and the interface transmission between amorphous network and nanocrystalline.
%K SiC films
%K nano
%K structure
%K doping
%K conductivity Meyer
%K Neldel<br>SiC薄膜
%K 纳米结构
%K 掺杂
%K 电导率MeyerNeldel规则
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A4E66A395126EBF3&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=DF92D298D3FF1E6E&sid=D7F3FD6D87AEF622&eid=94655B9881133A28&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=10