Development of High Performance 1mm Gate Width AlGaN/GaN Power HEMTs
高性能1mm AlGaN/GaN功率HEMTs研制

An high performance AlGaN/GaN power heterostructure field effect transistors(HEMTs) on sapphire substrate with total gate width 1mm is reported.New ohmic contact structure and air-bridge are employed to improve microwave power performance.A saturated current density of 0.784A/mm,a peak transconductance of 197mS/mm,a break-down voltage of up to 40V and a small leakage current under cut-off state are obtained.The 1mm gate width power device also displays a unit cutoff frequency(f T) of 20GHz and a maximum oscillation frequency f max of 28GHz,and also an output power 1.2W,a power gain 11dB,a PAE 32% in 2GHz.Port impedance characteristics show the potential for the applications of microwave field.