%0 Journal Article
%T Development of High Performance 1mm Gate Width AlGaN/GaN Power HEMTs<br>高性能1mm AlGaN/GaN功率HEMTs研制
%A Shao Gang
%A Liu Xinyu
%A He Zhijing
%A Liu Jian
%A Wei Ke
%A Chen Xiaojuan
%A Wu Dexin
%A Wang Xiaoliang
%A and Chen Hong
%A <br>邵刚
%A 刘新宇
%A 和致经
%A 刘键
%A 魏珂
%A 陈晓娟
%A 吴德馨
%A 王晓亮
%A 陈宏
%J 半导体学报
%D 2005
%I 
%X An high performance AlGaN/GaN power heterostructure field effect transistors(HEMTs) on sapphire substrate with total gate width 1mm is reported.New ohmic contact structure and air-bridge are employed to improve microwave power performance.A saturated current density of 0.784A/mm,a peak transconductance of 197mS/mm,a break-down voltage of up to 40V and a small leakage current under cut-off state are obtained.The 1mm gate width power device also displays a unit cutoff frequency(f T) of 20GHz and a maximum oscillation frequency f max of 28GHz,and also an output power 1.2W,a power gain 11dB,a PAE 32% in 2GHz.Port impedance characteristics show the potential for the applications of microwave field.
%K AlGaN/GaN
%K HEMT<br>微波功率
%K 单位截止频率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9B66817304FA2442&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=CA4FD0336C81A37A&sid=7E8E8B150580E4AB&eid=C753EB8AC8F551B9&journal_id=1674-4926&journal_name=半导体学报&referenced_num=7&reference_num=10