Surface Reaction Mechanism of SiGe/Si Growth by UHV/CVD
UHV/CVD外延生长SiGe/Si表面反应动力学

The surface reaction mechanism of Si 1-x Ge x/Si growth using SiH\-4 and GeH 4 in UHV/CVD system is studied. With the help of TPD(Temperature Programmed Deposition) and RHEED growth, the saturated absorption and desorption of SiH\-4 from Si(100) surface is investigated. It is found that all the 4 hydrogen atoms of one SiH\-4 molecule are absorbed to the Si surface, which means that the dissociated adsorption ratio is proportional to the fourth power of surface vacancies. The reaction of GeH\-4 is also analyzed. Based on these studies, a new surface reaction kinetic model on Si 1-x Ge x/Si epitaxial growth under UHV conditions by SiH\-4/GeH\-4 is proposed. The prediction of the model fits the experimental results very well.