%0 Journal Article
%T Surface Reaction Mechanism of SiGe/Si Growth by UHV/CVD<br>UHV/CVD外延生长SiGe/Si表面反应动力学
%A YU Zhuo
%A LI Dai
%A |zong
%A CHENG Bu
%A |wen
%A HUANG Chang
%A |jun
%A LEI Zhen
%A |lin
%A YU Jin
%A |zhong
%A WANG Qi
%A |ming
%A LIANG Jun
%A |wu
%A <br>于卓
%A 李代宗
%A 成步文
%A 黄昌俊
%A 雷震霖
%A 余金中
%A 王启明
%A 梁骏吾
%J 半导体学报
%D 2000
%I 
%X The surface reaction mechanism of Si 1-x Ge x/Si growth using SiH\-4 and GeH 4 in UHV/CVD system is studied. With the help of TPD(Temperature Programmed Deposition) and RHEED growth, the saturated absorption and desorption of SiH\-4 from Si(100) surface is investigated. It is found that all the 4 hydrogen atoms of one SiH\-4 molecule are absorbed to the Si surface, which means that the dissociated adsorption ratio is proportional to the fourth power of surface vacancies. The reaction of GeH\-4 is also analyzed. Based on these studies, a new surface reaction kinetic model on Si 1-x Ge x/Si epitaxial growth under UHV conditions by SiH\-4/GeH\-4 is proposed. The prediction of the model fits the experimental results very well.
%K SiGe/Si
%K UHV/CVD
%K growth
%K kinetics<br>SiGe/Si
%K UHV/CVD
%K 生长
%K 动力学
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C9EB84103F079982&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=B31275AF3241DB2D&sid=2497388423811B81&eid=1FA4E9C3E6E88FC8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=19