Exeiten Absorption Spectra of MQW Structures
GaAs/GaAlAs多量子阱激子吸收谱

The exciton absorption spectra of GaAs/GaAlAs MQW structures at temperatures between10k to 292k are measured.The exciton absorption resonaces (HH and LH) and step accumu-tive density Of state have been observed. The energy differences between light hole and heavyhole exciton absorption resonaces have been investigated. We also investigated the temperaturedependenc of the linewidth of HH exciton absorotion resonace.The LO phono broadenningconstant Fb in our sample is 6.1 meV which is smaller than that of the bulk GaAs, TheGaAs/GaAlAs MQW structures of 120 periods are grown on 100] oriented Cr-doped GaAs su-bstrate by MBE in the institute of semiconductors of chinese Academy of sciences.The GaAssubstrate is removed by selective chemical etching,leaving the MQW structures exposed over1mm~2 area.