%0 Journal Article
%T Exeiten Absorption Spectra of MQW Structures<br>GaAs/GaAlAs多量子阱激子吸收谱
%A Zeng An/Institute of Semiconductors
%A Academia SinicaWu Ronghan/Institute of Semiconductors
%A Academia SinicaZeng Yiping/Institute of Semiconductors
%A Academia SinicaKong Meiying/Institute of Semiconductors
%A Academia SinicaWang Qiming/Institute of Semiconductors
%A Academia Sinica
%A <br>曾安
%A 吴荣汉
%A 曾一平
%A 孔梅影
%A 王启明
%J 半导体学报
%D 1989
%I 
%X The exciton absorption spectra of GaAs/GaAlAs MQW structures at temperatures between10k to 292k are measured.The exciton absorption resonaces (HH and LH) and step accumu-tive density Of state have been observed. The energy differences between light hole and heavyhole exciton absorption resonaces have been investigated. We also investigated the temperaturedependenc of the linewidth of HH exciton absorotion resonace.The LO phono broadenningconstant Fb in our sample is 6.1 meV which is smaller than that of the bulk GaAs, TheGaAs/GaAlAs MQW structures of 120 periods are grown on 100] oriented Cr-doped GaAs su-bstrate by MBE in the institute of semiconductors of chinese Academy of sciences.The GaAssubstrate is removed by selective chemical etching,leaving the MQW structures exposed over1mm~2 area.
%K MQW
%K Exciton
%K Absorption Spectrum<br>GaAs
%K GaAlAs
%K 量子阱
%K 激子
%K 吸收谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=30C3430B8BCD97E0&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=708DD6B15D2464E8&sid=E348995F86F60FD3&eid=BEBF2238C7F1C1F1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0