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半导体学报 2003
Room-Temperature AlN Direct Bonding
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Abstract:
AlN films are grown on 100mm Si(100) substrate by ion beam enhanced deposition (IBED) technique.AFM result shows a smooth surface,with RMS value of 0 13nm.Furthermore,for the first time,a novel silicon on aluminum nitride (SOAN) structure is successfully fabricated by room temperature bonding of AlN with a hydrogen implanted Si wafer through the smart cut process.Spreading resistance profile (SRP),Rutherford backscattering spectrometry channeling (RBS/C) and cross section transmission microscopy (XTEM) are used to characterize the obtained SOAN structure.
