%0 Journal Article
%T Room-Temperature AlN Direct Bonding<br>AlN薄膜室温直接键合技术
%A Men Chuanling
%A Xu Zheng
%A An Zhenghua
%A Wu Yanjun
%A Lin Chenglu
%A <br>门传玲
%A 徐政
%A 安正华
%A 吴雁军
%A 林成鲁
%J 半导体学报
%D 2003
%I 
%X AlN films are grown on 100mm Si(100) substrate by ion beam enhanced deposition (IBED) technique.AFM result shows a smooth surface,with RMS value of 0 13nm.Furthermore,for the first time,a novel silicon on aluminum nitride (SOAN) structure is successfully fabricated by room temperature bonding of AlN with a hydrogen implanted Si wafer through the smart cut process.Spreading resistance profile (SRP),Rutherford backscattering spectrometry channeling (RBS/C) and cross section transmission microscopy (XTEM) are used to characterize the obtained SOAN structure.
%K AlN films
%K smart
%K cut process
%K silicon
%K on
%K insulator<br>AlN薄膜
%K 智能剥离
%K 绝缘层上硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9B42FE794CAF1A93&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=0B39A22176CE99FB&sid=CEC789B3C68C3BB3&eid=1D67BE204FBF4800&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=15