Photoreflectance Study on Modulation-Doped Structures
调制掺杂结构的光反射光谱研究

The photoreflectance (PR) spectra of modulated-doped n-GaAlAs/GaAs structures gro-wn by Molecular Beam Epitaxy (MBE) are measured. The correlation between spectroscopicfeatures and sublevels in the triangular potential well and the dependence of PR spectra onthe two-dimensional electron gas (2DEG) concentration, are investigated. The experimentalresults are in good agreement with the theoretical analysis.