%0 Journal Article
%T Photoreflectance Study on Modulation-Doped Structures<br>调制掺杂结构的光反射光谱研究
%A 汤寅生
%A 江德生
%A 庄蔚华
%A 孔梅影
%A 徐英武
%J 半导体学报
%D 1991
%I 
%X The photoreflectance (PR) spectra of modulated-doped n-GaAlAs/GaAs structures gro-wn by Molecular Beam Epitaxy (MBE) are measured. The correlation between spectroscopicfeatures and sublevels in the triangular potential well and the dependence of PR spectra onthe two-dimensional electron gas (2DEG) concentration, are investigated. The experimentalresults are in good agreement with the theoretical analysis.
%K n-GaAlAs/GaAs heterojunction
%K photoreflectance
%K Two-dimensional electron gas
%K MBE<br>掺杂
%K 异质结
%K 反射光谱
%K MBF
%K 半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F4AB69B4C129CC07&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=CA4FD0336C81A37A&sid=8E6AB9C3EBAAE921&eid=11B4E5CC8CDD3201&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=4