Measurements of Minority Generation Lifetime of MOS Structures with Nonuniformly Doped Substrate
非均匀掺杂衬底MOS结构少子产生寿命的测量

Transient response of non-uniformly doped MUS capacitors to a linear voltage ramp isanalysed. A triangular voltage sweep C-V technique is presented thus obtaining a method tomeasure the minority generation lifetime for non-uniformly doped MOS capacitors.The te-chnique is simple and can be used without knowing the doping profile of MOS substrate.