%0 Journal Article
%T Measurements of Minority Generation Lifetime of MOS Structures with Nonuniformly Doped Substrate<br>非均匀掺杂衬底MOS结构少子产生寿命的测量
%A Huang Qingan/Microelectronics Research Institute
%A Northwest Telecommunication Engineering Institute XianShi Baohua/Microelectronics Research Institute
%A Northwest Telecommunication Engineering Institute XianGu Ying/Microelectronics Research Institute
%A Northwest Telecommunication Engineering Institute XianZhang Desheng/Microelectronics Research Institute
%A Northwest Telecommunication Engineering Institute Xian
%A <br>黄庆安
%A 史保华
%A 顾英
%A 张德胜
%J 半导体学报
%D 1989
%I 
%X Transient response of non-uniformly doped MUS capacitors to a linear voltage ramp isanalysed. A triangular voltage sweep C-V technique is presented thus obtaining a method tomeasure the minority generation lifetime for non-uniformly doped MOS capacitors.The te-chnique is simple and can be used without knowing the doping profile of MOS substrate.
%K Nonuiformly doped MOS capacitors
%K Minority carriers
%K Generation lifetime<br>衬底
%K 掺杂
%K MOS电容
%K 少子
%K 产生寿命
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4FB41E02235832FB&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=DF92D298D3FF1E6E&sid=E49BED2EA9A8956B&eid=1918ADDC93A85779&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0