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半导体学报 2005
Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced PhotodetectorsKeywords: RCE探测器,高量子效率,直接键合,键合介质,InGaAs Abstract: A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si.based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.
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