%0 Journal Article
%T Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors
%A Mao Rongwei
%A Zuo Yuhu
%A Li Chuanbo
%A Cheng Buwen
%A Teng Xuegong
%A Luo Liping
%A Zhang Heshun
%A Yu Jinzhong
%A and Wang Qiming
%J 半导体学报
%D 2005
%I 
%X A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si.based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.
%K RCE探测器
%K 高量子效率
%K 直接键合
%K 键合介质
%K InGaAs
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F4FE283829929170&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=0B39A22176CE99FB&sid=273ADA1BCEFE8C00&eid=7979125BBE749348&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=18