GaN Growth on Si and Si-SiO2-Si Compliant Substrates
Si衬底和Si-SiO_2-Si柔性衬底上的GaN生长

GaN films are deposited on Si and Si-SiO 2-Si compliant substrates by MBE(molecular beam epitaxy) technique and compared optical properties and residual strain with that of the obtained films on the two-kind of substrates.Investigation of the surface morphology shows that crack-free GaN epilayers are obtained on compliant substrates with a value of RMS(root mean square) of 0.6nm.Photoluminescence measurements indicate a great reduce of the residual strain and impurity density in GaN films grown on compliant substrates compared with those on Si substrates.The results show that Si-SiO 2-Si compliant substrates are promising as a substrate for GaN material growth.