%0 Journal Article
%T GaN Growth on Si and Si-SiO2-Si Compliant Substrates<br>Si衬底和Si-SiO_2-Si柔性衬底上的GaN生长
%A Wang Junxi
%A Wang Xiaoliang
%A Liu Hongxin
%A Hu Guoxin
%A Li Jianping
%A Li Jinmin
%A Zeng Yiping
%A <br>王军喜
%A 王晓亮
%A 刘宏新
%A 胡国新
%A 李建平
%A 李晋闽
%A 曾一平
%J 半导体学报
%D 2004
%I 
%X GaN films are deposited on Si and Si-SiO 2-Si compliant substrates by MBE(molecular beam epitaxy) technique and compared optical properties and residual strain with that of the obtained films on the two-kind of substrates.Investigation of the surface morphology shows that crack-free GaN epilayers are obtained on compliant substrates with a value of RMS(root mean square) of 0.6nm.Photoluminescence measurements indicate a great reduce of the residual strain and impurity density in GaN films grown on compliant substrates compared with those on Si substrates.The results show that Si-SiO 2-Si compliant substrates are promising as a substrate for GaN material growth.
%K MBE
%K GaN
%K compliant substrate
%K photoluminescence<br>分子束外延
%K GaN
%K 柔性衬底
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=472EC24DEEA32BB5&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=B31275AF3241DB2D&sid=DA280A426E11FC95&eid=8243B77967FFD12E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=5&reference_num=14