Stress-Dependent Hot Carrier Degradation for pMOSFETs Structure Under Stress Mode Vg=Vd/2
HALO结构pMOSFETs在V_g=V_d/2应力模式下应力相关的热载流子退化

Hot carrier stress degradation for short channel pMOSFETs with ultra-thin gate oxides (2.5nm) and HALO structure is investigated under stress mode .V. g=.V. d/2.At high stress voltages,the device degradation is mainly caused by holes to break up Si-H bonds directly or the recombination of electrons and holes.With the decrease of stress voltage,the device degradation is caused by electron injection.At last,the critical voltage for different degradation mechanism is proposed and verified in experiments...