%0 Journal Article
%T Stress-Dependent Hot Carrier Degradation for pMOSFETs Structure Under Stress Mode Vg=Vd/2<br>HALO结构pMOSFETs在V_g=V_d/2应力模式下应力相关的热载流子退化
%A Hu Jing
%A Zhao Yao
%A Xu Mingzhen
%A Tan Changhua
%A <br>胡靖
%A 赵要
%A 许铭真
%A 谭长华
%J 半导体学报
%D 2004
%I 
%X Hot carrier stress degradation for short channel pMOSFETs with ultra-thin gate oxides (2.5nm) and HALO structure is investigated under stress mode .V. g=.V. d/2.At high stress voltages,the device degradation is mainly caused by holes to break up Si-H bonds directly or the recombination of electrons and holes.With the decrease of stress voltage,the device degradation is caused by electron injection.At last,the critical voltage for different degradation mechanism is proposed and verified in experiments...
%K hot carrier
%K primary impact ionization
%K secondary impact ionization
%K recombination<br>热载流子
%K 一次碰撞电离
%K 二次碰撞电离
%K 复合
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CBE00DEE207283CB&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=E158A972A605785F&sid=08076B8B3CC96095&eid=78976D931AD1540F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10