An Analytical Model of a LDMOS On-Resistance Using a Well as a High Resistance Drift Region
用阱作高阻漂移区的LDMOS导通电阻的解析模型

A theory for an on-resistance of a LDMOS using a well as a high resistance drift region is developed.The calculation formulas of a drift region on-resistance with field plate are given,and also a calculation formula of a double-diffused channel on-resistance is improved.An example is not only computed by the formulas given by the paper,but also simulated by the MEDICI program.The simulation shows that the difference between two results is lower than 5%.It is verified that the formulas given by the paper can help to design and analyze a LDMOS.