%0 Journal Article
%T An Analytical Model of a LDMOS On-Resistance Using a Well as a High Resistance Drift Region<br>用阱作高阻漂移区的LDMOS导通电阻的解析模型
%A Meng Jian
%A Gao Shan
%A Chen Junning
%A Ke Daoming
%A Sun Weifeng
%A Shi Longxing
%A Xu Chao
%A <br>孟坚
%A 高珊
%A 陈军宁
%A 柯导明
%A 孙伟锋
%A 时龙兴
%A 徐超
%J 半导体学报
%D 2005
%I 
%X A theory for an on-resistance of a LDMOS using a well as a high resistance drift region is developed.The calculation formulas of a drift region on-resistance with field plate are given,and also a calculation formula of a double-diffused channel on-resistance is improved.An example is not only computed by the formulas given by the paper,but also simulated by the MEDICI program.The simulation shows that the difference between two results is lower than 5%.It is verified that the formulas given by the paper can help to design and analyze a LDMOS.
%K well region
%K double-diffused MOS transistor
%K on-resistance
%K analytical model<br>阱区
%K 双扩散MOS晶体管
%K 导通电阻
%K 解析模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FC3766592736A9DD&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=F3090AE9B60B7ED1&sid=A7F20A391020FDEE&eid=0702FE8EC3581E51&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11