Strain Accommodation of Ultra-Thin Buffer Layer in Strained Heterostructure
应变异质结构中超薄中间层的应变协调作用

A simple model is presented to discuss the effect of ultra-thin buffer layer on the generation of misfit dislocations and strain relaxation in strained heterostructures.Based on the principle of minimum energy,the density of misfit dislocations at the interfaces can be obtained analytically.It is found that,when the lattice constant and the thickness of the ultra-thin buffer layer satisfy certain conditions,the ultra-thin layer can accommodate completely the misfit strain between the epilayer and the handling substrate without the generation of misfit dislocations at the interfaces.