%0 Journal Article
%T Strain Accommodation of Ultra-Thin Buffer Layer in Strained Heterostructure<br>应变异质结构中超薄中间层的应变协调作用
%A Chen Yonghai
%A Yang Shaoyan
%A Wang Zhanguo
%A <br>陈涌海
%A 杨少延
%A 王占国
%J 半导体学报
%D 2005
%I 
%X A simple model is presented to discuss the effect of ultra-thin buffer layer on the generation of misfit dislocations and strain relaxation in strained heterostructures.Based on the principle of minimum energy,the density of misfit dislocations at the interfaces can be obtained analytically.It is found that,when the lattice constant and the thickness of the ultra-thin buffer layer satisfy certain conditions,the ultra-thin layer can accommodate completely the misfit strain between the epilayer and the handling substrate without the generation of misfit dislocations at the interfaces.
%K strained heterostructures
%K lattice mismatch
%K compliant substrate
%K misfit dislocation<br>应变异质外延结构
%K 晶格失配
%K 可协变衬底
%K 失配位错
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1EDC08EC0A69D138&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=9CF7A0430CBB2DFD&sid=76F79DF7CA22520E&eid=4477555D45FDE796&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10