Effect of Additional HCl and Substrate Nitridation on GaN Films Grown by HVPE
额外HCl和氮化对HVPE GaN生长的影响

A new way to improve the quality and reproducibility of GaN film in hydride vapor phase epitaxy (HVPE) system is reported by introducing the additional HCl to the growth surface in the initial step of nucleation.In addition,substrate nitridation is often used in the growth technique of GaN.The effect of additional HCl and nitridation on the optical properties,structure and surface morphology of HVPE GaN films is studied.The results show that the quality of HVPE GaN films is improved in deed.But probably they have different formation mechanism on the growth of GaN films.