%0 Journal Article
%T Effect of Additional HCl and Substrate Nitridation on GaN Films Grown by HVPE<br>额外HCl和氮化对HVPE GaN生长的影响
%A Xiu Xiangqian
%A Zhang Rong
%A Li Jie
%A Lu Dianqing
%A Bi Zhaoxia
%A Ye Yuda
%A Yu Huiqiang
%A Zheng Youdou
%A <br>修向前
%A 张荣
%A 李杰
%A 卢佃清
%A 毕朝霞
%A 叶宇达
%A 俞慧强
%A 郑有炓
%J 半导体学报
%D 2003
%I 
%X A new way to improve the quality and reproducibility of GaN film in hydride vapor phase epitaxy (HVPE) system is reported by introducing the additional HCl to the growth surface in the initial step of nucleation.In addition,substrate nitridation is often used in the growth technique of GaN.The effect of additional HCl and nitridation on the optical properties,structure and surface morphology of HVPE GaN films is studied.The results show that the quality of HVPE GaN films is improved in deed.But probably they have different formation mechanism on the growth of GaN films.
%K hydride vapor phase epitaxy (HVPE)
%K GaN
%K additional HCl
%K nitridation<br>氢化物气相外延(HVPE)
%K GaN
%K 氮化
%K 额外HCl
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8498F46B08606E50&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=708DD6B15D2464E8&sid=D610BE6A5A0C75BF&eid=C9B4EBB1C6A169D8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=14