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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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Characteristics of WN_x/n-GaAs Schottky Barriers
WN_x/n-GaAs肖特基势垒特性
Zhang Lichun/Institute of Microelectronics, Peking University Gao Yuzhi/Institute of Microelectronics, Peking University Ning Baojun/Institute of Microelectronics, Peking University Fang Kewei/Institute of Microelectronics, Peking University Wang Suofa/Center of Microelectronics, Academia Sinica, Beijing Chai Shumin/Center of Microelectronics, Academia Sinica, Beijing,
张利春, 高玉芝, 宁宝俊, 方克微, 汪锁发, 柴淑敏
Keywords: Reactive sputtering,WN_x,GaAs,Schottky barrier,Self-aligned GaAsMESFETs
氮化钨,砷化镓,肖特基势垒,溅射
Abstract:
本文用俄歇能谱、卢瑟福背散射、电流-电压和电容-电压等方法研究了射频磁控反应溅射制备的WN_x/n-GaAs肖特基势垒特性。结果表明,经800℃快速热退火后,WN_x/n-GaAs势垒具有良好的整流特性和高温稳定性,其势垒高度为0.79ev,理想因子为1.19。在自对准GaAs MESFET工艺中,WN_x是一种好的栅材料。 Full-Text
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