%0 Journal Article
%T Characteristics of WN_x/n-GaAs Schottky Barriers<br>WN_x/n-GaAs肖特基势垒特性
%A Zhang Lichun/Institute of Microelectronics
%A Peking University Gao Yuzhi/Institute of Microelectronics
%A Peking University Ning Baojun/Institute of Microelectronics
%A Peking University Fang Kewei/Institute of Microelectronics
%A Peking University Wang Suofa/Center of Microelectronics
%A Academia Sinica
%A Beijing Chai Shumin/Center of Microelectronics
%A Academia Sinica
%A Beijing
%A <br>张利春
%A 高玉芝
%A 宁宝俊
%A 方克微
%A 汪锁发
%A 柴淑敏
%J 半导体学报
%D 1990
%I 
%X 本文用俄歇能谱、卢瑟福背散射、电流-电压和电容-电压等方法研究了射频磁控反应溅射制备的WN_x/n-GaAs肖特基势垒特性。结果表明,经800℃快速热退火后,WN_x/n-GaAs势垒具有良好的整流特性和高温稳定性,其势垒高度为0.79ev,理想因子为1.19。在自对准GaAs MESFET工艺中,WN_x是一种好的栅材料。
%K Reactive sputtering
%K WN_x
%K GaAs
%K Schottky barrier
%K Self-aligned GaAsMESFETs<br>氮化钨
%K 砷化镓
%K 肖特基势垒
%K 溅射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8B386B0A18766F38AC8B1852C2380316&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=DF92D298D3FF1E6E&sid=CF0706A3E35031F6&eid=A3F93694B058F76C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=2