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半导体学报 2005
Lattice-Matched InP-Based HEMTs with fT of 120GHzKeywords: cutoff frequency,high electron mobility transistors,InAlAs/InGaAs,InP Abstract: Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 2V,and the maximum current density of 500mA/mm.
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