%0 Journal Article
%T Lattice-Matched InP-Based HEMTs with fT of 120GHz
%A Chen Liqiang
%A Zhang Haiying
%A Yin Junjian
%A Qian He
%A Niu Jiebin
%A <br>Chen Liqiang
%A Zhang Haiying
%A Yin Junjian
%A Qian He
%A and Niu Jiebin
%J 半导体学报
%D 2005
%I 
%X Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 2V,and the maximum current density of 500mA/mm.
%K cutoff frequency
%K high electron mobility transistors
%K InAlAs/InGaAs
%K InP<br>截止频率
%K 高电子迁移率场效应晶体管
%K In
%K Al
%K As/InGa
%K As
%K InP2506S
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0E97911CF4015947&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=38B194292C032A66&sid=7D1E6EEC2019967D&eid=D93AD940782892D0&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=8