Research on AlGaN/GaN HEMT
AlGaN/GaN HEMT器件的研制

The fabrication of AlGaN/GaN HEMT and its properties at room temperature is reported.Source drain Ohmic contacts and Schottky metal system is Ti/Al/Pt/Au and Pt/Au,respectively.A maximum transconductance of 120mS/mm and a saturated current density of 0 95A/mm are obtained.