%0 Journal Article
%T Research on AlGaN/GaN HEMT<br>AlGaN/GaN HEMT器件的研制
%A 张小玲
%A 吕长治
%A 谢雪松
%A 李志国
%A 曹春海
%A 李拂晓
%A 陈堂胜
%A 陈效建
%J 半导体学报
%D 2003
%I 
%X The fabrication of AlGaN/GaN HEMT and its properties at room temperature is reported.Source drain Ohmic contacts and Schottky metal system is Ti/Al/Pt/Au and Pt/Au,respectively.A maximum transconductance of 120mS/mm and a saturated current density of 0 95A/mm are obtained.
%K AlGaN/GaN
%K HEMT
%K output characteristics<br>AlGaN/GaN
%K HEMT
%K 输出特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F4514450D49A9B13&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=5D311CA918CA9A03&sid=BCCCE1B88B87184D&eid=8AD9BBE1FAF6BB78&journal_id=1674-4926&journal_name=半导体学报&referenced_num=15&reference_num=13