Raman Studies of Microstructures in Crystallite Silicon Doped with Boron
微晶硅硼薄膜结构的喇曼研究

The microsize of silicon material, e.g. the average distortion energy U per bond, rmsbong-angle deviation have been quantitatively studied. Some of the microstructure inform-ation of doping boron complex in amorphous silicon have been provided by the change of theTO-like mode relative to the single crystal in Raman spectra.The reliable data and parame-ters for crystallite silicon can be offered during the process of the crystallization.