%0 Journal Article
%T Raman Studies of Microstructures in Crystallite Silicon Doped with Boron<br>微晶硅硼薄膜结构的喇曼研究
%A 程光煦
%A 陈坤基
%A 朱育平
%A 夏华
%A 张杏奎
%A 戚建邦
%A 王聪和
%J 半导体学报
%D 1991
%I 
%X The microsize of silicon material, e.g. the average distortion energy U per bond, rmsbong-angle deviation have been quantitatively studied. Some of the microstructure inform-ation of doping boron complex in amorphous silicon have been provided by the change of theTO-like mode relative to the single crystal in Raman spectra.The reliable data and parame-ters for crystallite silicon can be offered during the process of the crystallization.
%K Crystallite
%K Raman spectra<br>微晶硅
%K 喇曼谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=24DC4713AC4A5477&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=CA4FD0336C81A37A&sid=13553B2D12F347E8&eid=BC12EA701C895178&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0