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半导体学报 1991
Study on Deep Donor Levels in Te-Doped GaAsP
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Abstract:
Deep donor levels in Te-doped GaAs_(1-x)Px for the composition range of x=0.11-0.95have been studied by Deep level Transient Spectroscopy (DLTS). Three kinds of deep levelsA,B and C with emission activation energies of E_c~A=0.18eV, E_c~B=0.28eV, and E_c~C=0.38 eV were observed in these samples except for the sample with composition of x=0.11.Only level A appears in all samples. No any regularity for the presentation of B and C levelswas able to find. After further study on the emission and capture properties as well as theircomposition dependence for level A, it is considered that level A is originated from the DXcenter formed by substitutional Te impurities and the properties of B and C levels might be morecomplicated.
