%0 Journal Article
%T Study on Deep Donor Levels in Te-Doped GaAsP<br>GaAsP混晶中Te施主深能级的研究
%A Zhang Wenqing/
%A <br>张文清
%A 黄启圣
%A 康俊勇
%J 半导体学报
%D 1991
%I 
%X Deep donor levels in Te-doped GaAs_(1-x)Px for the composition range of x=0.11-0.95have been studied by Deep level Transient Spectroscopy (DLTS). Three kinds of deep levelsA,B and C with emission activation energies of E_c~A=0.18eV, E_c~B=0.28eV, and E_c~C=0.38 eV were observed in these samples except for the sample with composition of x=0.11.Only level A appears in all samples. No any regularity for the presentation of B and C levelswas able to find. After further study on the emission and capture properties as well as theircomposition dependence for level A, it is considered that level A is originated from the DXcenter formed by substitutional Te impurities and the properties of B and C levels might be morecomplicated.
%K Deep level
%K DX center
%K GaAsP semiconductor<br>深能级
%K DX中心
%K 混晶半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8BE958201288372B&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=CA4FD0336C81A37A&sid=CA4FD0336C81A37A&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0