Numerical Simulation of Current-Voltage Characteristics of MIS Tunnel Devices
MIS隧道器件电流-电压特性的数值模拟

A program for the numerical simulation of the current-voltage characteristics of MIS tun-nel devices is developed.This paper presents a new and efficient computational method. Thedifferential equations are integrated using Runge-Kutta integral method and the boundary con-ditions are satisfied according to a prediction-correction method.The current-voltage (I-V)characteristics for MIS tunnel diodes with thin and thick oxide are calculated using the prog-ram.Taking into account both the electrostatic and kinctic influences of interface states, asatisfactory fitting between the simulated and the experimental results of I-V characteristicsfer TiW/Si Schottky diode is obtained.