%0 Journal Article
%T Numerical Simulation of Current-Voltage Characteristics of MIS Tunnel Devices<br>MIS隧道器件电流-电压特性的数值模拟
%A Xia Yonghei/Institute of Semiconductors
%A Academia SinicaGeorges Pananakakis/Laboratoire de Physique des Composants a Semiconductcurs
%A CNRS UA-ENSERG
%A Grencble
%A FranceGeorges Kamarinos/Laboratoire de Physique des Composants a Semiconductcurs
%A CNRS UA-ENSERG
%A Grencble
%A France
%A <br>夏永伟
%A G.Pananakakis
%A G.Kamarinos
%J 半导体学报
%D 1989
%I 
%X A program for the numerical simulation of the current-voltage characteristics of MIS tun-nel devices is developed.This paper presents a new and efficient computational method. Thedifferential equations are integrated using Runge-Kutta integral method and the boundary con-ditions are satisfied according to a prediction-correction method.The current-voltage (I-V)characteristics for MIS tunnel diodes with thin and thick oxide are calculated using the prog-ram.Taking into account both the electrostatic and kinctic influences of interface states, asatisfactory fitting between the simulated and the experimental results of I-V characteristicsfer TiW/Si Schottky diode is obtained.
%K MIS tunnel device
%K numerical simulation
%K Computational method<br>MIS
%K 隧道器件
%K 数值模拟
%K 电流
%K 电压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F30797786DBDA89FF7DB&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=708DD6B15D2464E8&sid=F7C11D7E3E8C5D3F&eid=AB1DE136C335A86C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0