Epitaxial Growth of CeO_2 films on Si(100) Substrate and Its Electrical Properties
CeO_2高K栅介质薄膜的制备工艺及其电学性质

The deposition process of CeO 2,a high K gate dielectric thin film by using the pulsed laser deposition method has been investigated.The epitaxial CeO 2 thin films with (100) and (111) orientations on Si(100) substrates have been grown.The influence of different deposition conditions,including the nitrogen plasma bombardment to Si substrate surface is discussed.The structural and electrical properties of CeO 2 thin films are investigated,as well as interface with Si substrate.It shows that the nitrogen ion bombardment to Si substrate surface can not only change the growth structure but also improve the interfacial electrical properties of CeO 2/Si.