%0 Journal Article
%T Epitaxial Growth of CeO_2 films on Si(100) Substrate and Its Electrical Properties<br>CeO_2高K栅介质薄膜的制备工艺及其电学性质
%A 康晋锋
%A 刘晓彦
%A 王玮
%A 俞挺
%A 韩汝琦
%A 连贵君
%A 张朝晖
%A 熊光成
%J 半导体学报
%D 2001
%I 
%X The deposition process of CeO 2,a high K gate dielectric thin film by using the pulsed laser deposition method has been investigated.The epitaxial CeO 2 thin films with (100) and (111) orientations on Si(100) substrates have been grown.The influence of different deposition conditions,including the nitrogen plasma bombardment to Si substrate surface is discussed.The structural and electrical properties of CeO 2 thin films are investigated,as well as interface with Si substrate.It shows that the nitrogen ion bombardment to Si substrate surface can not only change the growth structure but also improve the interfacial electrical properties of CeO 2/Si.
%K high
%K K
%K gate dielectric
%K CeO _2 film
%K nitrided Si surface/interface<br>高K栅介质
%K CeO2薄膜
%K Si表面/界面氮化
%K 电学性质
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=221FDB147058CDFF&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=DF92D298D3FF1E6E&sid=461E94ABCF58C63F&eid=971ECAFE8682845B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=0