|
OALib Journal期刊
ISSN: 2333-9721
费用：99美元
|
|
|
|
Electrical Properties of Si~++P~+ Dually Implanted Semi-Insulating InP
半绝缘InP中Si~++P~+双注入的电学特性
Shen Honglie/Ion Beam Laboratory, Shanghai lnstitute of Metallurgy, Academia Sinica, Shanghai Yang Genqing/Ion Beam Laboratory, Shanghai lnstitute of Metallurgy, Academia Sinica, Shanghai Zhou Zuyao/Ion Beam Laboratory, Shanghai lnstitute of Metallurgy, Academia Sinica, Shanghai Zou Shichang/Ion Beam Laboratory, Shanghai lnstitute of Metallurgy, Academia Sinica, Shanghai,
沈鸿烈, 杨根庆, 周祖尧, 邹世昌
Keywords: InP,Dual Implantations,Conventional furnace annealing,Rapid thermal annealing
磷化铟,双注入,常规热退火,快速热退火
Abstract:
研究了在200℃热靶条件下经Si~+单注入和S~++P~+双注入的半绝缘InP常规热退火和快速热退火后的电学特性。热退火后,双注入样品中的电学性能优于单注入样品。采用快速热退火后,双注入的效果更加显著。Si~+150keV,5×10~(14)cm~(-2)+P~+160keV,5×10~(14)cm~(-2)双注入样品经850℃、5秒快速效退火后,最高载流子浓度达2.6×10~(19)cm~(-3),平均迁移率为890cm~2/V·s。 Full-Text
|
|
Contact Us
service@oalib.com QQ:3279437679 
WhatsApp +8615387084133
|
|
