%0 Journal Article
%T Electrical Properties of Si~++P~+ Dually Implanted Semi-Insulating InP<br>半绝缘InP中Si~++P~+双注入的电学特性
%A Shen Honglie/Ion Beam Laboratory
%A Shanghai lnstitute of Metallurgy
%A Academia Sinica
%A Shanghai Yang Genqing/Ion Beam Laboratory
%A Shanghai lnstitute of Metallurgy
%A Academia Sinica
%A Shanghai Zhou Zuyao/Ion Beam Laboratory
%A Shanghai lnstitute of Metallurgy
%A Academia Sinica
%A Shanghai Zou Shichang/Ion Beam Laboratory
%A Shanghai lnstitute of Metallurgy
%A Academia Sinica
%A Shanghai
%A <br>沈鸿烈
%A 杨根庆
%A 周祖尧
%A 邹世昌
%J 半导体学报
%D 1990
%I 
%X 研究了在200℃热靶条件下经Si~+单注入和S~++P~+双注入的半绝缘InP常规热退火和快速热退火后的电学特性。热退火后,双注入样品中的电学性能优于单注入样品。采用快速热退火后,双注入的效果更加显著。Si~+150keV,5×10~(14)cm~(-2)+P~+160keV,5×10~(14)cm~(-2)双注入样品经850℃、5秒快速效退火后,最高载流子浓度达2.6×10~(19)cm~(-3),平均迁移率为890cm~2/V·s。
%K InP
%K Dual Implantations
%K Conventional furnace annealing
%K Rapid thermal annealing<br>磷化铟
%K 双注入
%K 常规热退火
%K 快速热退火
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=490AC214B46F1919&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=5D311CA918CA9A03&sid=F8AEC975DBDD7F2F&eid=C824C8F9F54AE9B9&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0