Calculation of the Segregation Coefficient and the occupation Ratio GaGe/GeAs of the Amphoteric Impurity Ge in LPE-GaAs
两性杂质锗在LPE GaAs中分凝系数和占位比的计算

A theoretical temperature dependence of Ge segregation coefficient by is proposed extend-ing ternary alloy theory to pseudo-quaternary alloy system consisting of III-V compound andthe amphoteric impurity of group IV element.The temperature dependence of the occupationratio of Ge on Ga site to Ge on As site is also obtained.The calculated results are in agre-ement with the experimental data.Using iterative method,the quadric temperature dependenceof the interaction parameters in the Ga-Ge-As solid phase system is determined.