%0 Journal Article
%T Calculation of the Segregation Coefficient and the occupation Ratio GaGe/GeAs of the Amphoteric Impurity Ge in LPE-GaAs<br>两性杂质锗在LPE GaAs中分凝系数和占位比的计算
%A Yang Hui/Institute of Semiconductors
%A Academia Sinica
%A BeijingLiang Junwu/Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>杨辉
%A 梁骏吾
%J 半导体学报
%D 1989
%I 
%X A theoretical temperature dependence of Ge segregation coefficient by is proposed extend-ing ternary alloy theory to pseudo-quaternary alloy system consisting of III-V compound andthe amphoteric impurity of group IV element.The temperature dependence of the occupationratio of Ge on Ga site to Ge on As site is also obtained.The calculated results are in agre-ement with the experimental data.Using iterative method,the quadric temperature dependenceof the interaction parameters in the Ga-Ge-As solid phase system is determined.
%K LPE
%K Segregation
%K Phase diagram
%K GaAs<br>液相外延
%K 分凝系数
%K 相图
%K 砷化镓
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D42D3AFFA1F47A58&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=F3090AE9B60B7ED1&sid=00B9006659EBD8AC&eid=20D29EF591CB2C94&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0